PART |
Description |
Maker |
PH1920-90 |
Circular Connector; No. of Contacts:6; Series:TVS06; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:11-98 无线功率晶体90瓦,1930-1990兆赫 Wireless Power Transistor 90 Watts 1930-1990 MHz Wireless Power Transistor 90 Watts, 1930-1990 MHz
|
MACOM[Tyco Electronics]
|
PHI920-45 PH1920-45 |
Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz WIRELESS BIPOLAR POWER TRASISTOR 45W 1930-1990 MHZ 无线双极功率45930-1990兆赫TRASISTOR
|
Tyco Electronics OKI SEMICONDUCTOR CO., LTD.
|
AGR19030EF |
30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
EMRS-6X8 |
E-Series Surface Mount Mixer 1930 - 1990 MHz
|
MACOM[Tyco Electronics]
|
PH1920-45 |
Wireless Bipolar Power Transistor 45W, 1930-1990 MHz
|
M/A-COM Technology Solutions, Inc.
|
PH1920-45 |
WIRELESS BIPOLAR POWER TRASISTOR 45W 1930-1990 MHZ
|
Tyco Electronics
|
PTFA190451E PTFA190451F |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz
|
Infineon Technologies AG
|
PTFB193404F |
Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz
|
Infineon Technologies AG
|
PTFB191501E PTFB191501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 ?1990 MHz
|
Infineon Technologies AG
|